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PD -93799A
IRF7324
HEXFET(R) Power MOSFET
q q q q q q
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.1mm) Available in Tape & Reel 2.5V Rated
S1 G1 S2 G2
1
8
D1 D1 D2 D2
2
7
VDSS = -20V
3
6
4
5
RDS(on) = 0.018
Description
New trench HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-20 -9.0 -7.1 -71 2.0 1.3 16 12 -55 to + 150
Units
V A W W mW/C V C
Thermal Resistance
Parameter
RJA
Max.
Units
62.5 C/W
Maximum Junction-to-Ambient
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1
6/26/00
IRF7324
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -20 --- --- --- -0.45 19 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- -0.02 --- --- --- --- --- --- --- --- 42 7.1 12 17 36 170 190 2940 630 420
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.018 VGS = -4.5V, ID = -9.0A 0.026 VGS = -2.5V, ID = -7.7A -1.0 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -9.0A -1.0 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 63 ID = -9.0A 11 nC VDS = -16V 18 VGS = -5.0V --- VDD = -10V --- ID = -1.0A ns --- RG = 6.0 --- RD = 10 --- VGS = 0V --- pF VDS = -15V --- = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 180 300 -2.0 A -71 -1.2 270 450 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, I F = -2.0A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec.
2
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IRF7324
1000
VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V BOTTOM -0.75V TOP
1000
-I D , Drain-to-Source Current (A)
100
10
-I D, Drain-to-Source Current (A)
100
VGS -4.5V -3.5V -2.5V -2.0V -1.5V -1.3V -1.0V BOTTOM -0.75V TOP
10
1
1
-0.75V
0.1
0.1
-0.75V
20s PULSE WIDTH TJ = 25 C
1 10 100
0.01 0.1
0.01 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = -9.0A
-I D , Drain-to-Source Current (A)
1.5
T J = 150 C
10
1.0
TJ = 25 C
1
0.5
0.1 0.5
V DS = -15V 20s PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 3.5
0.0 -60 -40 -20
VGS = -4.5V
0 20 40 60 80 100 120 140 160
-VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRF7324
5000
4000
-VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = -9.0A VDS = -16V
8
C, Capacitance (pF)
3000
Ciss
6
2000
4
1000
Coss Crss
1 10 100
2
0
0 0 10 20 30 40 50 60
-VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
-ISD , Reverse Drain Current (A)
10
-ID , Drain Current (A) I
TJ = 150 C
100 10us
TJ = 25 C
1
100us 10 1ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1 0.1
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms 100
-VSD ,Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7324
10.0
VDS
8.0
RD
VGS RG
D.U.T.
+
-I D , Drain Current (A)
6.0
VGS
Pulse Width 1 s Duty Factor 0.1 %
4.0
Fig 10a. Switching Time Test Circuit
2.0
td(on) tr t d(off) tf
VGS
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20 10 0.10 0.05 0.02 1 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
VDD
5
IRF7324
R DS(on) , Drain-to -Source On Resistance ( )
R DS (on) , Drain-to-Source On Resistance ( )
0.025
0.10
0.08
0.020
ID = -9.0A
0.06
0.04 VGS = -2.5V 0.02 VGS = -4.5V
0.015
0.010 2.0 2.5 3.0 3.5 4.0 4.5
0.00 0 10 20 30 40 50 60 -I D , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
QGS
QGD
D.U.T.
-
VGS
VDS
IRF7324
SO-8 Package Details
D -B-
D IM
5
IN C H E S M IN .05 32 .00 40 .01 4 .00 75 .18 9 .15 0 M AX .06 88 .00 98 .01 8 .009 8 .196 .15 7
M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.25 0.46 0.25 4.98 3.99
A
6 5 H 0 .2 5 (.0 1 0 ) M AM
5
8 E -A-
7
A1 B C D E e e1 H K
0 .1 0 (.0 0 4 ) L 8X 6 C 8X
1
2
3
4
e 6X
e1 A
K x 4 5
.05 0 B A S IC .02 5 B A S IC .22 84 .01 1 0.16 0 .244 0 .01 9 .05 0 8
1.27 B A S IC 0 .635 B A S IC 5.8 0 0.2 8 0.4 1 0 6.20 0.48 1.27 8
-C B 8X 0 .2 5 (.0 1 0 ) A1 M CASBS
L
R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X
NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 ) 8X
1 .2 7 ( .0 5 0 ) 3X
Part Marking
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7
IRF7324
Tape and Reel
T E R M IN A L N U M B E R 1
1 2 .3 ( .4 8 4 ) 1 1 .7 ( .4 6 1 )
8 .1 ( .3 1 8 ) 7 .9 ( .3 1 2 )
F E E D D IR E C T IO N
N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
3 3 0 .0 0 (1 2 .9 9 2 ) MAX.
1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/00
8
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